Unipolar barriers in near-broken-gap heterostructures for high-performance self-powered photodetectors
نویسندگان
چکیده
The two-dimensional heterostructure is a promising research direction in photodetection. However, developing good photodetector with high responsivity and fast speed still challenging. Herein, we fabricate high-performance self-powered broadband (355–1064 nm) based on near-broken-gap GeSe/SnS 2 /InSe heterostructure, where SnS used as potential hole barrier layer. device shows an ultrahigh open-circuit voltage (V OC ) of 0.57 V, power-dependent 1.87 A W ?1 at 355 nm, response time 8 ?s the mode. Based near-broken band alignment, InSe layer electron mobility can efficiently collect photogenerated electrons from GeSe to improve conversion efficiency. Furthermore, unipolar interface inhibit Langevin recombination resulting V enhancement. Notably, anisotropy ratio photocurrent our also enhanced ?3.5, which higher than photodetectors other anisotropic devices counterparts. This work provides opportunity for realization high-sensitivity polarization-sensitive photodetector.
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ژورنال
عنوان ژورنال: Applied Physics Letters
سال: 2023
ISSN: ['1520-8842', '0003-6951', '1077-3118']
DOI: https://doi.org/10.1063/5.0133326